Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology

Autor: Vinay Nair, Xu Xie, Eric Janda, Zhongchang Yu, Rafael Aldana, Anton J. deVilliers, Yuan He, Mike Hyatt, Erik Byers, Y. Cao, Tjitte Nooitgedagt, Peter Engblom, Hua-yu Liu, Danielle Hines, Wenjin Shao, Junwei Lu, Chang-Qun Ma, Chris Aquino, Scott L. Light, Jianming Zhou, Ronald Goossens
Rok vydání: 2010
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
Popis: Scanner matching based on wafer data has proven to be successful in the past years, but its adoption into production has been hampered by the significant time and cost overhead involved in obtaining large amounts of statistically precise wafer CD data. In this work, we explore the possibility of optical model based scanner matching that maximizes the use of scanner metrology and design data and minimizes the reliance on wafer CD metrology. A case study was conducted to match an ASML ArF immersion scanner to an ArF dry scanner for a 6Xnm technology node. We used the traditional, resist model based matching method calibrated with extensive wafer CD measurements and derived a baseline scanner manipulator adjustment recipe. We then compared this baseline scanner-matching recipe to two other recipes that were obtained from the new, optical model based matching method. In the following sections, we describe the implementation of both methods, provide their predicted and actual improvements after matching, and compare the ratio of performance to the workload of the methods. The paper concludes with a set of recommendations on the relative merits of each method for a variety of use cases.
Databáze: OpenAIRE