Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition
| Autor: | Narihito Okada, Kazuyuki Tadatomo, Takashi Egawa, Makoto Miyoshi, Mizuki Yamanaka, Tetsuya Takeuchi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Polymers and Plastics business.industry Alloy Metals and Alloys Polishing Substrate (electronics) Chemical vapor deposition engineering.material Epitaxy Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials Sapphire engineering Optoelectronics Crystallite business |
| Zdroj: | Materials Research Express. 8:025906 |
| ISSN: | 2053-1591 |
| Popis: | Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c-plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga0.98In0.02N film on a facet-structured GaN film formed on a c-plane sapphire substrate by the epitaxial lateral overgrowth technique, and its surface was treated with the chemical-mechanical polishing. It was observed that an Al0.835In0.165N film grown with an in-plane tensile strain exhibited a relatively smooth surface whereas an Al0.781In0.219N film grown with an in-plane compressive strain exhibited a granular morphology owing to a columnar polycrystalline structure. This phenomenon was quite similar to that observed for AlInN films grown non GaN/sapphire templates (GaN templates); therefore, it was speculated that the microstructure variation might have been caused by the in-plane compressive strain generated in AlInN films on the GaInN template in the same way as on GaN templates or FS-GaN substrates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|