Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe:As layers

Autor:	François Jomard, J. F. Rommeluère, Alain Lusson, D. Cote, C. Dolin, H. Pelletier, B. Theys
Rok vydání:	2000
Předmět:	inorganic chemicals Hydrogen Diffusion Doping technology industry and agriculture Analytical chemistry General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element Epitaxy chemistry Deuterium lipids (amino acids peptides and proteins) Metalorganic vapour phase epitaxy Arsenic
Zdroj:	Journal of Applied Physics. 88:550-554
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.373694
Popis:	Arsenic doped CdTe layers have been successfully exposed to a hydrogen or deuterium plasma to study the diffusion of these species and their interactions with arsenic. It is shown that hydrogen behaves similarly when unintentionally (during growth) or intentionally (plasma exposure) introduced. Infrared absorption measurements show that in both cases, identical As–H complexes are formed. The IR absorption line of deuterium–arsenic complexes has also been detected. The concentration of active arsenic acceptors decreases after intentional hydrogen or deuterium diffusion, as a consequence of the formation of these As–H or As–D complexes. But, the diffusion profiles of deuterium show that deuterium in the semiconductor binds also to other As-related centers which have not been identified unambiguously.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bffa3549cb19569dfe21e2faef7b34cc https://doi.org/10.1063/1.373694 Zobrazit plný text záznamu