| Autor: |
P. Joslyn, J.E. Breezley, D.E. Grider, P.P. Ruden, R. Mactaggart, D. Tetzlaff, A.I. Akinwande, Jim Nohava, Thomas E. Nohava |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC). |
| DOI: |
10.1109/gaas.1990.175471 |
| Popis: |
A complementary heterostructure insulated gate field effect transistor (c-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1 mu m gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 mu W/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1 kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1 K SRAMs at a power of 650 mW. The 1 K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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