Optical emission diagnostics for contact etching in Applied Materials Centura HDP 5300 etcher

Autor:	Susan Clardy Mcnevin, Keith V. Guinn, K. Tokashiki, M. Cerullo
Rok vydání:	1996
Předmět:	Materials science Silicon business.industry Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Blanket Photoresist Condensed Matter Physics Surfaces Coatings and Films Resist Etch pit density chemistry Etching Optoelectronics Wafer Plasma diagnostics business
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1137-1141
ISSN:	1520-8559 0734-2101
Popis:	This article reports the use of an optical emission diagnostic as an in situ monitor of the photoresist etch rate during contact etch in a commercial, hot wall high density plasma reactor. The chamber was conditioned by prior photoresist etch and postetch oxygen clean to achieve reproducible conditions. The etch rate of photoresist and thermal oxide was measured, along with the optical emission observed for Si, SiO2 and photoresist wafers. With the rf bias power fixed at 600 W (125 mm wafers), the chamber roof temperature (240–260 °C) and source power (2350–2800 W) were varied in an experimental array to produce a range of photoresist etch rates (700–2800 A/min). C2 and SiF optical emissions were measured for blanket Si, SiO2 and photoresist wafers. A procedure which ratioed the C2 to SiF emissions of a blanket photoresist wafer and normalized this ratio to the C2 to SiF emission ratio of a Si wafer, measured under the same conditions, was used. A strong correlation observed between the amount of C2 optic...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bfee3e9607ae26f05e433d89aca92431 https://doi.org/10.1116/1.580283 Zobrazit plný text záznamu