Vital role of Ar ambient pressure in controlled properties of nanocrystalline CdS thin films
| Autor: | Vinay Gupta, Pragati Kumar, Nupur Saxena |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Band gap Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Nanocrystalline material Electronic Optical and Magnetic Materials Pulsed laser deposition symbols.namesake 0103 physical sciences symbols Optoelectronics Crystallite Electrical and Electronic Engineering Thin film Raman spectroscopy business Ambient pressure |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:6755-6763 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-020-03233-w |
| Popis: | A report on the manipulation of structural, optical, and electrical properties of nanocrystalline CdS (ncCdS) thin films in the framework of varying Ar ambient pressure in pulsed laser deposition (PLD) is presented here. Increase in Ar ambient pressure results in reduction of crystallite size which in turns increases the structural imperfections and structural phase transformation of ncCdS thin films. The most significant observation here is the bleaching of multiphonon Raman modes (MRMs) particularly LO + 2E2, 2LO + 2E2, etc. in ncCdS thin films. An acute investigation on the reason of bleaching of LO + 2E2, 2LO + 2E2, etc. modes is carried out here and concluded that it is due to the fading of E2 mode with increasing Ar pressure as confirmed by low-frequency micro-Raman measurements. UV–visible absorption and photoluminescence spectroscopies are used to examine the optical properties like bandgap and possible electronic transitions in ncCdS thin films. Further, transport properties of ncCdS thin films are investigated using Hall measurement and I–V characteristics. |
| Databáze: | OpenAIRE |
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