Drain current modelling of planar TFETs
| Autor: | Rekha K. James, U S Shikha |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics 02 engineering and technology Swing 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics Power (physics) symbols.namesake Planar 0103 physical sciences Limit (music) Boltzmann constant Hardware_INTEGRATEDCIRCUITS symbols Field-effect transistor Current (fluid) 0210 nano-technology Communication channel |
| Zdroj: | Materials Today: Proceedings. 43:3452-3456 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2020.09.098 |
| Popis: | Tunnel Field Effect Transistors are one of the most promising ultra-low power steep slope device. Extremely low OFF current, sub-threshold swing which is less than Boltzmann's limit, higher immunity towards short channel effects and CMOS compatibility are the most important features of this technology. Works related to the drain current modelling of various planar TFETs are presented in this paper. Different approaches and assumptions adopted to solve the surface potential to derive the drain current is reviewed here. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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