Investigation of graphene on hexagonal SiC polytypes by atomic force microscopy
Jazyk: | ruština |
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Rok vydání: | 2022 |
Předmět: |
аÑомно-ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑоÑкопиÑ
atomic force microscopy raman spectroscopy ÑпекÑÑоÑÐºÐ¾Ð¿Ð¸Ñ ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°Ñионного ÑаÑÑеÑÐ½Ð¸Ñ ÑвеÑа гÑаÑен graphene одноÑлойное и двÑÑ Ñлойное гÑаÑеновое покÑÑÑие вÑÑокоÑемпеÑаÑÑÑнÑй оÑжиг monolayer and double-layer graphene coatings high-temperature annealing |
DOI: | 10.18720/spbpu/3/2022/vr/vr22-963 |
Popis: | ÐÐ°Ð½Ð½Ð°Ñ ÑабоÑа поÑвÑÑена изÑÑÐµÐ½Ð¸Ñ Ð·Ð°Ð²Ð¸ÑимоÑÑи ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸ÑеÑÐºÐ¸Ñ Ð¿Ð°ÑамеÑÑов меÑода вÑÑокоÑемпеÑаÑÑÑного оÑжига подложек каÑбида кÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° колиÑеÑÑво обÑазÑемого одноÑлойного гÑаÑена. ÐÑли иÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¾Ð±Ð»Ð°ÑÑи одноÑлойного и двÑÑ Ñлойного гÑаÑена на повеÑÑ Ð½Ð¾ÑÑи 4H-SiC подложек меÑодами ÐелÑвин-зонд микÑоÑкопии и ÑпекÑÑоÑкопии комбинаÑионного ÑаÑÑеÑÐ½Ð¸Ñ ÑвеÑа. ÐкÑпеÑименÑалÑно ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ñ Ð¾ÑновнÑе паÑамеÑÑÑ ÑоÑÑа, пÑи коÑоÑÑÑ Ð´Ð¾ÑÑигаеÑÑÑ Ð¼Ð¸Ð½Ð¸Ð¼Ð°Ð»Ñное знаÑение двÑÑ ÑлойнÑÑ Ð¾Ð±Ð»Ð°ÑÑей и коÑоÑÑе позволÑÑÑ Ð²ÑполнÑÑÑ ÑинÑез одноÑлойного покÑÑÑÐ¸Ñ Ñ Ð´Ð¾Ð»ÐµÐ¹ до 95% повеÑÑ Ð½Ð¾ÑÑи подложки. This work is devoted to the study of the dependence of the technological parameters of the method of high-temperature annealing of silicon carbide substrates on the amount of single-layer graphene formed. The regions of single-layer and double-layer graphene on the surface of 4H-SiC substrates were studied by Kelvin probe microscopy and Raman spectroscopy. The main growth parameters were experimentally established, at which the minimum value of two-layer regions is achieved and which allow one to synthesize a single-layer coating with a fraction of up to 95% of the substrate surface. |
Databáze: | OpenAIRE |
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