Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells

Autor:	Huei Min Huang, Wei-Wen Chan, S. C. Wang, Hao-Chung Kuo, Tien-Chang Lu, Jinchai Li
Rok vydání:	2010
Předmět:	Materials science Scattering business.industry Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_element Nanolithography chemistry Sapphire Optoelectronics Nanorod Inductively coupled plasma business Indium Quantum well
Zdroj:	Journal of Applied Physics. 108:063508
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3483239
Popis:	Nonpolar (a-plane) GaN nanorod arrays with embedded InxGa1−xN/GaN (x=0.09, 0.14, 0.24, and 0.30) multiple quantum wells (MQWs) grown on r-plane sapphire have been fabricated successfully by self-assembled Ni nanomasks and subsequent inductively coupled plasma reactive-ion etching. After nanorod fabrications, the polarization ratio of the emission from MQWs with lower indium composition (x=0.09 and 0.14) slightly decreases but apparently increases by at most 79% for the samples with higher indium composition (x=0.24 and 0.30). Competition between the effect of multiple scattering, strain relaxation and reduction in localized centers, expected in a-plane MQW samples, are attributed to the variations in the polarization ratios after the nanorod formation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bfa688bc759f415fda8a08cc53a38b91 https://doi.org/10.1063/1.3483239 Zobrazit plný text záznamu