Annealing of boron‐implanted corrosion resistant copper films
Autor: | Pei-Jun Ding, S. Hymes, William A. Lanford, Shyam P. Murarka |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 74:1331-1334 |
ISSN: | 1089-7550 0021-8979 |
Popis: | Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is found that a post‐implantation inert gas annealing (at 400 °C for 20 min) removes the increase in sheet resistance caused by implant damage while preserving the passivation effects of the B implant. |
Databáze: | OpenAIRE |
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