Annealing of boron‐implanted corrosion resistant copper films

Autor:	Pei-Jun Ding, S. Hymes, William A. Lanford, Shyam P. Murarka
Rok vydání:	1993
Předmět:	Materials science Passivation Annealing (metallurgy) Metallurgy Inorganic chemistry General Physics and Astronomy chemistry.chemical_element Copper Corrosion Ion implantation chemistry Inert gas Boron Sheet resistance
Zdroj:	Journal of Applied Physics. 74:1331-1334
ISSN:	1089-7550 0021-8979
Popis:	Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is found that a post‐implantation inert gas annealing (at 400 °C for 20 min) removes the increase in sheet resistance caused by implant damage while preserving the passivation effects of the B implant.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf9e570214a053b7f66fbcace24f21c8 https://doi.org/10.1063/1.354913 Zobrazit plný text záznamu