Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

Autor:	Mantavya Sinha, Phyllis Shi Ya Lim, Dongzhi Chi, Yee-Chia Yeo, Rinus T. P. Lee
Rok vydání:	2009
Předmět:	Materials science Schottky barrier Transistor Metallurgy Contact resistance Analytical chemistry Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_element Electron equipment and supplies law.invention Carbon film Nickel silicide chemistry law Carbon
Zdroj:	Journal of Applied Physics. 106:043703
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3197144
Popis:	The effective electron Schottky barrier height (ΦBN) of nickel silicide (NiSi:C) formed on silicon-carbon (Si1−yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. ΦBN was observed to decrease substantially with an increase in Csub. When Csub is increased from 0% to 1.5%, ΦBN is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n-channel metal-oxide-semiconductor field-effect transistors.
Databáze:	OpenAIRE
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