| Autor: |
Shiwei Zhu, Hailin Tu, Mei Ji, Lei Wang, Jun Du |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
Journal of Physics: Conference Series. 152:012028 |
| ISSN: |
1742-6596 |
| DOI: |
10.1088/1742-6596/152/1/012028 |
| Popis: |
The size-controlled, non-agglomerated, 5nm Si nanoparticles were fabricated in the middle of HfO2 layers using a pulsed laser ablation (PLA) system at a relatively low pressure and formed trilayer structure (HfO2/Si-nps/HfO2) on n-type Si. These high density nanoparticles (>1x1011 cm-2) were imaged with SEM. The crystallinity of HfO2 and Si nanoparticles were characterized by HRTEM. The memory effect of a Si nanoparticles floating gate memory structure consisting of HfO2 tunneling and control oxides have been investigated by means of high-frequency (1 MHz) capacitance-voltage (C-V) measurements. HRTEM study revealed that the Si nanoparticles are single crystals with average size of about 5 nm in diameter and are well distributed within the amorphous HfO2 matrix. The memory effect was observed by the hysteresis loop in the C-V curves and a high storage charge density of about 5×1011cm-2 and a large flat-band voltage shift of 4.8V have been achieved due to charging and discharging to the nanoparticles. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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