Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP

Autor:	G. M. Cohen, V. Richter, D. Ritter, R. Kalish
Rok vydání:	1999
Předmět:	Diffraction Crystallography Materials science Physics and Astronomy (miscellaneous) X-ray crystallography Relaxation (NMR) Stress relaxation Substrate (electronics) Channelling Layer (electronics) Molecular physics Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 74:43-45
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123127
Popis:	Layers of Ga0.25In0.75P were grown on InP by metalorganic molecular beam epitaxy and studied by ion channeling and asymmetric high-resolution x-ray diffraction. The angular difference between the substrate and the layer channeling angles agreed with the corresponding angular difference calculated from the x-ray results. Negligible relaxation was found in Ga0.25In0.75P layers up to a thickness of 50 nm. Thicker layers were found to be partially relaxed. In the channeling experiments an additional minimum in the substrate angular scan profile at an angle corresponding roughly to the layer’s minimum yield was found. This extra minimum was attributed to the steering effect at the strained GaInP/InP interface [S. Hashimoto, Y. Q. Feng, W M. Gibson, L. J. Schowalter, and B. D. Hunt, Nucl. Instrum. Methods B 13, 45 (1986)], and was confirmed by a comparison with the x-ray diffraction measurements.
Databáze:	OpenAIRE
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