Fabrication of Through-Silicon-via (TSV) for ultra-high vacuum atom-optics cell
| Autor: | Ho-Chiao Chuang, Hsiang-Fu Li, Yun-Siang Lin, Yu-Hsin Lin |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Condensed Matter::Quantum Gases
Fabrication Materials science Through-silicon via business.industry Ultra-high vacuum Nanotechnology Temperature cycling Chip Computer Science::Other Magnetic trap Atom Physics::Atomic and Molecular Clusters Atom optics Optoelectronics Physics::Atomic Physics business |
| Zdroj: | 2012 IEEE Sensors. |
| DOI: | 10.1109/icsens.2012.6411540 |
| Popis: | Atom chips have been proved to generate tight magnetic field to trap atoms under ultra high vacuum environment and thus replaced the big coil apparatus. In our work, the Through-Silicon-Via (TSV) technique has been integrated to the atom chip to make the vacuum system even smaller. The feature of our atom chip with TSV is after thermal cycling process (350 ˚C), the TSV can still pass the helium leaking test and sustain at least 17 Amps current though it without burned out. Thus a vacuum Pyrex glass cell can be anodicially bonded to the front side of atom chip and high currents can be applied from the backside to the front side of the atom chip to create the magnetic trap for atom trapping experiments. |
| Databáze: | OpenAIRE |
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