| Popis: |
Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in Hg1-xCdxTe single crystals. Such doping also improved the photoelectric properties, especially increased the excess carrier lifetime. Taking into account the value of equilibrium concentration of S, Se and Zn iso-valency dopants in Hg1-xCdxTe single crystals it was concluded that the most suitable iso-valency dopant is Se. |
