An overview of GaN FET Technology, Reliability, Radiation and Market for future Space Application

Autor: Fernando Javier Pinto Marin, Fernando Gómez-Carpintero, Alexandre Guidoin, Klaus Hirche, Miguel Rodriguez Alvarez, Marco Carbone, Sylvain Prevot, Mario Gomez Alonso, Marc Marin, Sebastien Morand, Emilio Lapeña, Nicolas Neugnot
Rok vydání: 2019
Předmět:
Zdroj: 2019 European Space Power Conference (ESPC).
DOI: 10.1109/espc.2019.8932067
Popis: GaN technology has gained interest and is becoming widely commercially available due to their superior performances in power conversion applications. The paper shall promote the need for European GaN technology and boost R&D in the technological and reliability field for space. The paper will provide a clear overview on the technology, reliability, radiation, application and market.
Databáze: OpenAIRE