Conductance of armchair silicene nanoribbon junctions
| Autor: | Zhi-Bo Feng, Li Ming, Zhao Zhengyin, Han Hong-pei |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed matter physics Band gap Silicene business.industry Conductance 02 engineering and technology Spin–orbit interaction 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal Semiconductor visual_art 0103 physical sciences Turn (geometry) visual_art.visual_art_medium Function method 010306 general physics 0210 nano-technology business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 111:172-178 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2019.03.020 |
| Popis: | Using the non-equilibrium Green's function method, the conductance (G) of armchair silicene nanoribbon (ASiNR) junctions are studied. The width of the left (right) ASiNR is denoted as NL (NR), and NL > NR. With decreasing NL-NR, G increases as a whole. With increasing NL or NR, the number (width) of conductance plateaus in the low energy region increases (decreases). When NL-NR = 14 or 26, a conductance peak appears at EF = 0. For metal/semiconductor (M/S), semiconductor/metal (S/M), and semiconductor/semiconductor (S/S) ASiNR junctions with NL-NR = 10, dips appear in the conductance steps. For metal/metal (M/M) ASiNR junctions, two dips (G = 0) and one peak around EF = 0 turn up when NL-NR increases to a certain extent. For S/M (S/S) ASiNR junctions, the width of the conductance gap (ΔEG) is determined by the energy gap of the left (right) semiconducting ASiNR. For M/S ASiNR junctions, ΔEG is determined jointly by the energy gap of the left metallic and right semiconducting ASiNRs. |
| Databáze: | OpenAIRE |
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