193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process

Autor:	Sung-Bo Hwang, Victoria L. Graffenberg, Georgia K. Rich, Won D. Kim
Rok vydání:	2000
Předmět:	Plasma etching Materials science business.industry Analytical chemistry law.invention Chamber pressure Resist law Optoelectronics Process optimization Photomask Photolithography Reactive-ion etching business Layer (electronics)
Zdroj:	Advances in Resist Technology and Processing XVII.
ISSN:	0277-786X
DOI:	10.1117/12.388267
Popis:	Thin Layer Imaging (TLI) technique offers opportunity for lithographic performance gain as well as issues relating to its complexity of the process. Of those improvement possibilities, utilizing hyper fine resolution one can gain using very thin (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf7a2eccaf5cc00f8e690616f28fd001 https://doi.org/10.1117/12.388267 Zobrazit plný text záznamu