Static fault localization on Memory failures using Photon Emission Microscopy
| Autor: | N. Dayanand, J.C. Lam, H. P. Ng Z. H. Mai, A. C. T. Quah, G. B. Ang, C.Q. Chen, S.J. Moon |
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| Rok vydání: | 2015 |
| Předmět: |
Dynamic random-access memory
Engineering Hardware_MEMORYSTRUCTURES Sense amplifier business.industry Electrical engineering Semiconductor memory Hardware_PERFORMANCEANDRELIABILITY computer.file_format Fault (power engineering) law.invention law Electronic engineering Bitmap Node (circuits) Static random-access memory business computer NMOS logic |
| Zdroj: | 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. |
| DOI: | 10.1109/ipfa.2015.7224389 |
| Popis: | Conventionally, Static Random Access Memory (SRAM) failures rely on memory bitmap for failure analysis. Static fault localization approach is ineffective except if the defect is large enough to cause a resistive short between the VDD and VSS nodes. However, it was observed that subtle defects that fall in the wordline (WL) of the pass gate transistor results in a partially turned-on NMOS with electroluminescence that can be effectively localized by Photon Emission Microscopy (PEM). In this paper, we leverage on this phenomenon to showcase 4 cases where static fault localization using PEM has helped the foundry to resolve memory BIST yield loss on advanced technology node devices without bitmap capability. |
| Databáze: | OpenAIRE |
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