Industrial GaN FET technology
| Autor: | Benoit Lambert, K. Riepe, Hervé Blanck, Hermann Stieglauer, Helmut Jung, Reza Behtash, J. Thorpe, S. Heckmann, Peter Brückner, Jörg Splettstößer, Laurent Favede, F. Bourgeois, Dominik Köhn, Didier Floriot, Zineb Ouarch, Marc Camiade, Michael Hosch |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | International Journal of Microwave and Wireless Technologies. 2:21-32 |
| ISSN: | 1759-0795 1759-0787 |
| DOI: | 10.1017/s1759078710000073 |
| Popis: | GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III–V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed. |
| Databáze: | OpenAIRE |
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