Autor: |
Jiro Ida, Keisuke Noguchi, Kenji Itoh, Shunya Tsuchimoto |
Rok vydání: |
2019 |
Předmět: |
|
Zdroj: |
2019 IEEE Wireless Power Transfer Conference (WPTC). |
DOI: |
10.1109/wptc45513.2019.9055668 |
Popis: |
In this paper, the high sensitive 2.4 GHz band rectenna with direct matching topology is described. The rectenna is consisting of the inductive planar 3-strip folded dipole antenna with 10 $\mathrm{k}\Omega$ impedance and the SOI-CMOS rectifier IC. The rectifier IC is fabricated on Global Foundries 40 nm SOI-CMOS for improvement of the rectification efficiency in $\mu \mathrm{W}$ region. Furthermore, the inductive planar 3-strip folded dipole antenna is proposed to be combined with the rectifier IC with capacitive admittance for direct impedance matching. The developed rectenna achieves the rectification efficiency of 14.7 % at the input power of -30 dBm. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|