New aspects of copper diffusion in semi‐insulating gallium arsenide
| Autor: | St. Griehl, J. Klöber, M. Herms, W. Siegel, J. R. Niklas |
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| Rok vydání: | 1996 |
| Předmět: |
Photoluminescence
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Diffusion Analytical chemistry chemistry.chemical_element Copper Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Hall effect Lattice (order) Grain boundary Dislocation |
| Zdroj: | Applied Physics Letters. 69:1767-1769 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.117479 |
| Popis: | The diffusion of copper in semi‐insulating liquid‐encapsulated‐Czochralski‐grown gallium arsenide at 800 °C was examined by photoluminescence, photoetching, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A diffusion rate of 4.5×10−6 cm2 s−1 was obtained. It could be estimated that the diffusion takes place predominantly by substitution on lattice sites. Diffusing copper migrates preferentially along the walls of the dislocation cellular network. |
| Databáze: | OpenAIRE |
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