| Autor: |
G. Salmini, Annalisa Bonfiglio, F. Magistrali, M. Maini, Massimo Vanzi, Maria Benedetta Casu |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
International Symposium for Testing and Failure Analysis. |
| ISSN: |
0890-1740 |
| Popis: |
The occurrence of sudden failures has been reported for 980 nm SL SQW InGaAs pump lasers. The post-mortem analysis reveals failure modes that are consistent with the formation of defects at the active area. The problem calls for two separate efforts: monitoring the degradation at suitable time resolution and structural characterization of defects. This article reports about the optical power and overall voltage monitoring results during a constant current lifetest, in which "sudden failures" switched off the lasers in a few hours, after 1500 hours of regular life, and about their interpretation based on TEM cross-sectional images across an EBIC-detected high recombination site. The hypothesis that Recombination Enhanced Defect Reaction (REDR) is a suitable mechanism for defect growth in forward biased GaAs-based diodes is proposed and discussed that REDR is the origin of the observed sudden failures, starting from native defects located in "cool" regions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
