Epitaxial BaTiO3 films on silicon for MFSFET applications
| Autor: | Jamal Ramdani, Jeff Finder, Jun Wang, Jay Curless, Corey Overgaard, Ravi Droopad, B. Ooms, J. A. Hallmark, Zhiyi Yu, Daniel S. Marshall |
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| Rok vydání: | 1999 |
| Předmět: |
Diffraction
Reflection high-energy electron diffraction Materials science Silicon business.industry Atomic force microscopy chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Hysteresis chemistry Control and Systems Engineering Materials Chemistry Ceramics and Composites Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Integrated Ferroelectrics. 27:41-50 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | Recently, we have grown epitaxial BaTiO3 films directly on a Si (001) substrate using molecular beam epitaxy (MBE). The films have been characterized both physically (RHEED, XRD, AFM, SE) and electrically (CV & IV). The films show streaky RHEED patterns and sharp X-ray diffraction patterns, indicating epitaxial BTO growth. The leakage current is below 1E-8 A/cm2 at 2V. The CV results show good interface properties. The films exhibit a 0.5V hysteresis in the CV curves. |
| Databáze: | OpenAIRE |
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