Steady State Gamma Testing of a 4K NMOS Dynamic Ram
| Autor: | B. M. Temkin, D. W. Coleman |
|---|---|
| Rok vydání: | 1976 |
| Předmět: |
Nuclear and High Energy Physics
Dynamic random-access memory Steady state (electronics) Materials science business.industry Transistor Semiconductor device law.invention Threshold voltage Read-write memory Nuclear Energy and Engineering law Optoelectronics Irradiation Electrical and Electronic Engineering business NMOS logic |
| Zdroj: | IEEE Transactions on Nuclear Science. 23:1301-1303 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1976.4328456 |
| Popis: | Samples of the Texas Instruments TMS4060JL, 4096 bit dynamic random-access memory (4K RAM) were tested in the ionizing environment of a /sup 137/Ce source. Irradiated in an active condition, the devices were observed to fail at 1 x 10/sup 3/ rads (Si). Twenty-four hours after irradiation, 4 of the 5 devices tested were again functional. The devices were not powered and were at room temperature during the 24 hour anneal period. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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