Material properties of plasma-thinned bonded SOI wafers

Autor:	P.B. Mumola, T. Feng, G.J. Gardopee, D.P. Mathur, M. Matloubian
Rok vydání:	2002
Předmět:	Materials science Plasma etching Silicon business.industry Wafer bonding Silicon on insulator chemistry.chemical_element Plasma law.invention Capacitor chemistry law Electronic engineering Optoelectronics Wafer sense organs Reactive-ion etching business
Zdroj:	Proceedings of 1993 IEEE International SOI Conference.
DOI:	10.1109/soi.1993.344591
Popis:	Gate-oxide breakdown measurements were made to determine the quality of the Si surface of plasma-thinned Si wafers. Circular MOS capacitors having a thermal oxide of 190 A were fabricated on unprocessed bulk Si wafers and plasma-thinned wafers. The distribution of gate-oxide breakdown voltages for 250-/spl mu/m diameter MOS capacitors fabricated on a bulk Si wafer and on a plasma-thinned bulk Si wafer are shown. The similarity between the breakdown distributions is an indication that the AcuThin wafer thinning process does not degrade the Si surface quality. Based on these and other results to be presented, we believe that this plasma etching process for thinning bonded Si wafers does not cause any surface or subsurface damage which could adversely impact device performance, i.e., it preserves the bulk silicon material qualities. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf578ea4e0bd861f96dad3dbc083d927 https://doi.org/10.1109/soi.1993.344591 Zobrazit plný text záznamu