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Multilayer antireflection coatings have been modeled in visible and infrared regions (1-5 μm) bands to increase the transmittance of glass and silicon substrates. The transmittance was studied using different semiconductor materials with different thickness ( single, double and three) layers to determine the best design that depends on the manufacture of antireflection coatings at low costs and few layers of coatings to reduce the stress generated by the increased number of layers. MgF2 and TiO2 materials are used in the visible region (300-1000 nm) at the central wavelength (500 nm). The transmittance of MgF2 single–layer with a quarter waves optical thickness is reached (98.61%) and the transmittance value is (98.74%) for arrangement (. The transmittance of the infrared spectrum for antireflection coating materials depends on the thickness and temperature of these materials because of scattering and absorption in such materials. LaF3, ZrO2, ZnSe, and CdTe materials are used in the infrared region at a design wavelength (3000 nm). The maximum value of transmittance is around (99.99%) for the best design that consisting of three layers with quarter wavelength thickness. Keywords: Antireflection Coatings, Multilayers, Semiconductor, Transmittance |
