| Autor: |
B. Pregardier, Christopher D. Hull, Joo Leong Tham, M.A. Margarit, Rahul Magoon, F. Carr |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Solid-State Circuits. 34:286-291 |
| ISSN: |
0018-9200 |
| DOI: |
10.1109/4.748179 |
| Popis: |
A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC consisting of receive, transmit, and local oscillator (LO) sections is presented. The transmit section achieves an unwanted sideband suppression of -43 dBc, LO leakage of -59 dBc, and third-order spurious rejection of -70 dBc. The transmit output noise level is -165 dBc/Hz at a 20-MHz offset from the carrier. The on-chip very high-frequency oscillator has a phase-noise level of -106 dBc/Hz at 100-kHz offset when operating at 800 MHz. The receive section has 36 dB of gain with 36 dB of gain range in 12-dB steps. The transceiver IC has been fabricated using a 25-GHz f/sub t/ silicon bipolar process and is designed to operate over a supply-voltage range of 2.7-5.0 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
