Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs

Autor:	Joseph C. Bardin, James Chingwei Li, Zachariah Boynton, Metin Ayata, Ahmet Hakan Coskun
Rok vydání:	2014
Předmět:	Materials science CMOS Broadband noise Bicmos process Electronic engineering Flicker noise Electrical and Electronic Engineering BiCMOS Noise (electronics) Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 35:998-1000
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2014.2343942
Popis:	The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with f t /fmax values of ~300 GHz. Noise models have been extracted and the predicted performance agrees well with measurement. The results indicate that this technology is an excellent option for future millimeter-wave low-noise applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf520c26526f16dc6d13b1af5d964c80 https://doi.org/10.1109/led.2014.2343942 Zobrazit plný text záznamu