Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts
| Autor: | Ali Javey, Matin Amani, Geun Ho Ahn, Tae-Young Kim, Seungjun Chung, Takhee Lee, Younggul Song |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry General Engineering General Physics and Astronomy Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound Semiconductor chemistry Electrode Monolayer Optoelectronics General Materials Science Field-effect transistor 0210 nano-technology business Molybdenum disulfide Layer (electronics) Electron-beam lithography |
| Zdroj: | ACS Nano. 10:2819-2826 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.5b07942 |
| Popis: | We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attrac... |
| Databáze: | OpenAIRE |
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