Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure
| Autor: | K. P. Kotlyar, K. Yu Shugurov, Alexey D. Bolshakov, Igor Shtrom, S. A. Kukushkin, Rodion R. Reznik, Alexey M. Mozharov, Ivan Mukhin, A.V. Osipov, G. E. Cirlin, O. Yu Koval, Vladimir V. Fedorov |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Nanowire 02 engineering and technology 01 natural sciences law.invention Crystal symbols.namesake law 0103 physical sciences Solar cell General Materials Science 010302 applied physics business.industry Open-circuit voltage Mechanical Engineering Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Mechanics of Materials symbols Optoelectronics 0210 nano-technology business Layer (electronics) Raman scattering Molecular beam epitaxy |
| Zdroj: | Materials Science in Semiconductor Processing. 90:20-25 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2018.09.024 |
| Popis: | In this paper we study the solar cell based on GaN nanowires array grown on Si substrate with buffer SiC layer via molecular beam epitaxy. Crystal quality of SiC layer and GaN nanowires was studied by means of Raman scattering technique and low temperature photoluminescence measurements. Spectral and volt-ampere characteristics of the n-GaN/SiC/p-Si heterostructures with different thickness of diffusive buffer SiC-3С layers were studied. It was shown that increase of the buffer layer thickness over 100 nm leads to rise of the open circuit voltage and to increase of the efficiency of solar cell in comparison with n-GaN/p-Si heterostructure without buffer layer. Experimental data shows the presence of the defect states at the heterointerface. |
| Databáze: | OpenAIRE |
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