| Autor: |
M.J. Delaney, M. Wetzel, G.A. Ellis, A. Kurdoghlian, R. Bowen |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535). |
| DOI: |
10.1109/mwsym.2004.1335853 |
| Popis: |
A W-band DHBT power amplifier chip set consisting of a cascode power amplifier and a driver amplifier fabricated in InP technology is reported. The cascode power amplifier has a total of 160 um/sub 2/ of emitter area and results in a power gain of 8.5 dB and saturated output power of more than 14.4 dBm at 94.5 GHz. The driver power amplifier provides a peak signal gain of 9.8 dB at 102 GHz and peak saturated output power of 9.5 dBm at 94.7 GHz. To the author's knowledge, this is the highest reported output power and gain above 90 GHz for an HBT amplifier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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