Non-ideal current - voltage characteristics in MBE-grown heterojunction bipolar transistors
| Autor: | V Roberts, D W E Allsopp |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Current injection technique Materials Chemistry Optoelectronics Zener diode Electrical and Electronic Engineering Homojunction business Quantum tunnelling Leakage (electronics) Diode |
| Zdroj: | Semiconductor Science and Technology. 11:1346-1353 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/11/9/017 |
| Popis: | The current - voltage characteristics of heterojunction bipolar transistors and Si homojunction bipolar transistors grown by MBE have been measured with the aim of elucidating the causes of degraded common-emitter gain and low . It is shown that high reverse diode leakage currents arising from Zener tunnelling contribute to low in all structures considered. In forward bias, recombination currents in the space charge layers are the dominant cause of excess base current at temperatures above . Below this temperature a defect-assisted tunnelling mechanism gives rise to diode non-ideality. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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