Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms

Autor:	Chu Viet Ha, Duy Khanh Nguyen, Dang Tuan Anh, J. Guerrero-Sanchez, D. M. Hoat
Rok vydání:	2023
Předmět:	Materials Chemistry General Chemistry Catalysis
Zdroj:	New Journal of Chemistry. 47:2787-2796
ISSN:	1369-9261 1144-0546
DOI:	10.1039/d2nj05634h
Popis:	Spin density in the XC (X = Si and Ge) monolayers doped with group-VA (N, P, and As) atom.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf3664bf6b18d887a5eeee4566b5d678 https://doi.org/10.1039/d2nj05634h Zobrazit plný text záznamu