Highly stable amorphous-silicon thin-film transistors on clear plastic
| Autor: | Ke Long, Kunigunde H. Cherenack, Alex Z. Kattamis, B. Hekmatshoar, Sigurd Wagner, James C. Sturm |
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| Rok vydání: | 2008 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Nanocrystalline silicon chemistry.chemical_element Strained silicon Oxide thin-film transistor Threshold voltage chemistry.chemical_compound Silicon nitride chemistry Thin-film transistor Optoelectronics business |
| Zdroj: | Applied Physics Letters. 93:032103 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2963481 |
| Popis: | Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5×105V∕cm, the threshold voltage shift extrapolated to only ∼1.2V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5×105V∕cm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000Cd∕m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs. |
| Databáze: | OpenAIRE |
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