RF extraction of self-heating effects in FinFETs of various geometries

Autor:	Sarah H. Olsen, Sergej Makovejev, Jean-Pierre Raskin
Rok vydání:	2011
Předmět:	Engineering Fin business.industry Thermal resistance Extraction (chemistry) MOSFET Electrical engineering Optoelectronics Silicon on insulator Fin width Fin lines business Self heating
Zdroj:	2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Popis:	Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf30a320bdbc929bf27b0307dd317810 https://doi.org/10.1109/sirf.2011.5719331 Zobrazit plný text záznamu