Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples

Autor:	Damian Radziewicz, P. Prunici, B. Sciana, Marek Tłaczała, Andrej Vincze, M. Florovic, Rudolf Srnanek, Gert Irmer, D.S. Mc Phail, M. Vesely, Jaroslav Kováč
Rok vydání:	2005
Předmět:	Condensed Matter::Materials Science Materials science Phonon Doping Calibration Analytical chemistry Longitudinal optical Condensed Matter Physics Spectroscopy Instrumentation Bevel Surfaces Coatings and Films Micro raman spectroscopy
Zdroj:	Vacuum. 80:20-23
ISSN:	0042-207X
Popis:	A new method for determining the doping concentrations in very thin GaAs layers is presented. The method is based on the evaluation and calibration of the changes in ratio of transversal to longitudinal optical phonon intensities measured by micro-Raman spectroscopy at different positions along the bevel prepared through the examined structure. The doping concentrations measurements by micro-Raman spectroscopy on bevelled structures are in good agreement with SIMS depth profiling analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf2fda0d6e8fd53d0bddb651884fae24 https://doi.org/10.1016/j.vacuum.2005.07.021 Zobrazit plný text záznamu Full Text from ScienceDirect