Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

Autor: Vladimir Smirnov, E. Marins, Jürgen Hüpkes, Lothar Spiess, Ivan Hotovy, W. Böttler, Th. Kups, Jaroslav Kováč, J. Hotovy
Rok vydání: 2013
Předmět:
Zdroj: Applied Surface Science. 269:81-87
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.10.180
Popis: Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4 × 10 −4 Ω cm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature to 280 °C. The main goal was to identify the relationship between structural and electrical properties. Generally, ITO layers were rather smooth with granular topography; electro-optically superior layers exhibited substantially different surface morphology of large, well-organized domain formations. Hall mobility of remarkably high value of 49 cm 2 /V s (resistivity of 2.6 × 10 −4 Ω cm) was achieved for the ITO layers, which were deposited at surprisingly low temperature of 125 °C. ITO process has been successfully applied, even at room temperature, to fabricate front contacts for microcrystalline silicon solar cells, exhibiting excellent performance on both rigid and flexible substrates.
Databáze: OpenAIRE