High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors
| Autor: | B. Golja, N.E. Byer, S.W. Duncan, Sander Weinreb, S.P. Svensson, Abdollah Eskandarian, B.C. Kane, D.-W. Tu |
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| Rok vydání: | 1994 |
| Předmět: |
Engineering
Radiation business.industry Amplifier Coplanar waveguide Transistor Electrical engineering Integrated circuit High-electron-mobility transistor Condensed Matter Physics Noise figure Low-noise amplifier law.invention W band law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 42:2590-2597 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.339801 |
| Popis: | Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and a maximum gain of 33.5 dB with a 6.2 dB noise figure at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips feature coplanar waveguide circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads. > |
| Databáze: | OpenAIRE |
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