Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films
Autor: | Pattukkannu Murugavel, Ch. Thirmal, Subhajit Pal, Pranab Parimal Biswas |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) business.industry Poling General Physics and Astronomy Schottky diode 02 engineering and technology Photovoltaic effect 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity chemistry.chemical_compound Dipole chemistry 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business Bismuth ferrite |
Zdroj: | Journal of Applied Physics. 123:024101 |
ISSN: | 1089-7550 0021-8979 |
Popis: | Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications. |
Databáze: | OpenAIRE |
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