The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

Autor:	Vinay Chikarmane, C. Sudhama, A I Tasch, Jack C. Lee, Jiyoung Kim
Rok vydání:	1991
Předmět:	Dynamic random-access memory Materials science Fabrication business.industry Lead zirconate titanate Microbiology law.invention chemistry.chemical_compound Capacitor chemistry law Sputtering Cavity magnetron Optoelectronics Thin film business Dram
Zdroj:	MRS Proceedings. 230
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-230-297
Popis:	The feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bf0cbf3fee379e5cba07bd0227878b2e https://doi.org/10.1557/proc-230-297 Zobrazit plný text záznamu Full text from SpringerLink