Suppression of switching loss dependence on charge imbalance of superjunction MOSFET
| Autor: | Wataru Saito, Yoshitaka Hokomoto, Hideyuki Ura, Masato Nashiki, Kenji Mii, Jun Onodera, Hiroaki Yamashita, Syotaro Ono |
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| Rok vydání: | 2015 |
| Předmět: |
Imagination
Chemical substance Materials science business.industry media_common.quotation_subject Electrical engineering Charge (physics) Hardware_PERFORMANCEANDRELIABILITY Threshold voltage MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Transient (oscillation) business AND gate Hardware_LOGICDESIGN media_common Voltage |
| Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| Popis: | We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment. |
| Databáze: | OpenAIRE |
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