Autor: |
Gunnar Landgren, Ulf Öhlander, O. Kjebon, S. Nilsson, D. Karlsson-Varga, S. Lindgren, S. Lourdudoss, J. Wallin, B. Broberg |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. |
Popis: |
Three-electrode DFB (distributed feedback) lasers with excellent performance and single-mode yield have been fabricated using a robust technology which includes MOVPE (metal-organic vapor-phase epitaxy) growth of quantum wells, reactive ion etching, semi-insulating regrowth by hydride VPE, and separate grating layers. Line widths below 1 MHz, modulation response over 10 GHz, and very high side mode suppression of 51 dB were achieved. The authors have fabricated and evaluated such lasers for the 1.55- mu m-wavelength region in the InGaAsP/InP materials system. > |
Databáze: |
OpenAIRE |
Externí odkaz: |
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