Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor
| Autor: | Joo-Tae Moon, Yong-jin Kim, Kye Hyun Baek, Gyung-jin Min, KH Bai, Chang-Jin Kang, Han-Ku Cho, Ken Tokashiki |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Plasma etching Pixel business.industry Metals and Alloys Photodetector Surfaces and Interfaces Plasma Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Optics Silicon nitride chemistry Materials Chemistry Wafer Reactive-ion etching business Leakage (electronics) |
| Zdroj: | Thin Solid Films. 515:4864-4868 |
| ISSN: | 0040-6090 |
| Popis: | Plasma process-induced “white pixel defect” (WPD) of CMOS active pixel sensor (APS) is studied for Si3N4 spacer etch back process by using a magnetically enhanced reactive ion etching (MERIE) system. WPD preferably takes place at the wafer edge region when the magnetized plasma is applied to Si3N4 etch. Plasma charging analysis reveals that the plasma charge-up characteristic is well matching the edge-intensive WPD generation, rather than the UV radiation. Plasma charging on APS transfer gate might lead to a gate leakage, which could play a role in generation of signal noise or WPD. In this article the WPD generation mechanism will be discussed from plasma charging point of view. |
| Databáze: | OpenAIRE |
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