The Hysteresis Characteristics of Low Temperature (≤ 200 °) Silicon Nanocrystals Embedded in Silicon-Rich Silicon Nitride Films

Autor:	Kyoung Min Lee, Wan-Shick Hong, Ki-Su Keum, Jae-Dam Hwang, Kil-Sun No
Rok vydání:	2011
Předmět:	chemistry.chemical_compound Hysteresis Materials science Silicon chemistry Silicon nitride business.industry Nanocrystalline silicon Optoelectronics chemistry.chemical_element Silicon nanocrystals business
Zdroj:	ECS Transactions. 35:47-52
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3647903
Popis:	The electrical properties of silicon nanocrystals (Si NCs) embedded in silicon-rich silicon nitride (SRSN) films were investigated by fabricating metal-insulator-semiconductor capacitor structures to utilize the Si NCs as charge storage nodes. The Si NCs embedded in SRSN films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °. The counterclockwise hysteresis loops were observed in capacitance-voltage (C-V) characteristics. A memory window of 13 V was observed in the sweep voltage range of ±12 V.
Databáze:	OpenAIRE
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