| Autor: |
G. Van der Plas, Victor Moroz, Abdelkarim Mercha, Chukwudi Okoro, Serge Biesemans, J.H. Cho, Philippe Soussan, P. Asimakopoulos, Alex Yakovlev, I. De Wolf, J. Van Olmen, Y. Yang, Eric Beyne, Shinichi Domae, Bart Swinnen, Pol Marchal, Sarasvathi Thangaraju, Munkang Choi, Youssef Travaly, D. Sabuncuoglu Tezcan, N. Minas, D. Perry, Augusto Redolfi |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 International Electron Devices Meeting. |
| Popis: |
As scaling becomes increasingly difficult, 3D integration has emerged as a viable alternative to achieve the requisite bandwidth and power efficiency challenges. However mechanical stress induced by the through silicon vias (TSV) is one of the key constraints in the 3D flow that must be controlled in order to preserve the integrity of front end devices. For the first time an extended and comprehensive study is given for the stress induced by single- and arrayed TSVs and its impact on both analog and digital FEOL devices and circuits. This work provides a complete experimental assessment and quantifies the stress distribution and its effect on front end devices. By using a combined experimental and theoretical approach we provide a framework that will enable stress aware design and the right definition of keep out zone and ultimately save valuable silicon area. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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