Synchrotron radiation assisted Si epitaxial growth: Comparison of growth characteristics between Si2H6and SiH2Cl2gases

Autor:	Tetsuo Akutsu, Tsuneo Urisu, Kozo Kuchitsu
Rok vydání:	1993
Předmět:	Physics and Astronomy (miscellaneous) Chemistry law Desorption Analytical chemistry Synchrotron radiation Crystal growth Substrate (electronics) Irradiation Thin film Atmospheric temperature range Crystallization law.invention
Zdroj:	Applied Physics Letters. 62:2821-2823
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109221
Popis:	Effects of synchrotron radiation (SR) irradiation on the Si epitaxial growth using Si2H6 and SiH2Cl2 gases were investigated in the substrate temperature range of 400–600 °C. Single‐crystal growth was observed in the whole temperature region for SiH2Cl2, but only at certain high temperatures, where the growth rate showed a significant temperature dependence, for Si2H6. Gas‐phase excitation mechanism became dominant in the low‐temperature deposition. SR‐assisted desorption of hydrogen is found to be important in the process of crystallization in the case of Si2H6, whereas chemical processes such as desorption in the form of HCl are considered as probable for SiH2Cl2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::befdd11813b42fad22022ffa095440d4 https://doi.org/10.1063/1.109221 Zobrazit plný text záznamu