Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide
| Autor: | E A Kolosovskii, A V Tsarev |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Coupling
Materials science Silicon photonics Silicon business.industry Scattering Physics::Optics chemistry.chemical_element Statistical and Nonlinear Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Tunnel effect Optics chemistry Transmission (telecommunications) law Electrical and Electronic Engineering business Waveguide Quantum tunnelling |
| Zdroj: | Quantum Electronics. 43:744-750 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe2013v043n08abeh015089 |
| Popis: | Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 μm in dimensions) ensures 98 % and 99 % transmission efficiency at ~1.55 μm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|