Compensation of CdTe by Doping With Gallium

Autor: Michael Fiederle, J. L. Castaño, V. Babentsov, Victoria Corregidor, T. Feltgen, Ernesto Diéguez, Klaus-Werner Benz
Rok vydání: 2001
Předmět:
Zdroj: Crystal Research and Technology. 36:535-542
ISSN: 1521-4079
0232-1300
DOI: 10.1002/1521-4079(200107)36:6<535::aid-crat535>3.0.co;2-r
Popis: Semi-insulating CdTe single crystals doped with Ga were grown from the vapour phase by the modified Markov technique MMT. The study of the resistivity map in the cross-sections cut along the growth direction has been performed. The compensation phenomenon is analysed in the framework of the three levels Fermi-statistic model. It is shown that a semi-insulation behaviour throughout the ingot is due to the compensation of shallow impurities by the deep level. From the low-temperature photoluminescence spectra it was concluded that shallow donors (Ga Cd ) are partly compensated by (Ga Cd -V Cd ) - and (Ga Cd -Cd Te ) complexes and by residual acceptors (Na Cd , Cu Cd ). The microscopic structure of (Ga Cd -Cd Te ) complex is proposed based on the value of its local phonon mode and the growth conditions. A native defect like Teed which has a deep level near the middle-band-gap is suppose to give a stable compensation and a tolerance for variation in shallow impurity concentrations.
Databáze: OpenAIRE
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