Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
| Autor: | K. S. Zhuravlev, Vladimir G. Mansurov, D. Yu. Kazantsev, I. A. Aleksandrov, D. Yu. Protasov, A. A. Zaitsev, Timur V. Malin, A. S. Kozhukhov, D. S. Milakhin, B. Ya. Ber, V. E. Zemlyakov, V. I. Egorkin |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Transistor chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Buffer (optical fiber) law.invention chemistry law Impurity 0103 physical sciences Optoelectronics Gallium 0210 nano-technology business High electron Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Technical Physics Letters. 45:761-764 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785019080108 |
| Popis: | It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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